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Mateck Silicon Carbide Substrate, SiC (6H)
| Category | Ceramic , Carbide |
| Manufacturer | Mateck GmbH |
| Trade Name | |
| Port | Shanghai port,China |
| Trade Terms | FOB, CFR, CIF |
| Payment Terms | L/C, T/T, Western Union |
| Download PDF | Mateck Silicon Carbide Substrate, SiC (6H).pdf  |
| Price | EMAIL US sales@lookpolymers.com |
Material Notes:
Substrate single crystals for III-V nitrides
| Physical Properties | Metric | English | Comments |
|---|---|---|---|
| a Lattice Constant | 3.08 Å | 3.08 Å | |
| c Lattice Constant | 15.12 Å | 15.12 Å |
| Thermal Properties | Metric | English | Comments |
|---|---|---|---|
| Melting Point | 2700 °C | 4890 °F |
| Descriptive Properties | Value | Comments |
|---|---|---|
| Growth Techniques | Lely | |
| Lattice Mismatch to GaN | 3.5 | |
| Orientation | (0001) | |
| Orientation Accuracy ( ° ), Max | 30 | |
| Polishing | one side or both sides epi-polished | |
| Standard Size (mm) | 10 x 10, 10 x 5, thickness 0.3 mm | |
| State | monocrystalline | |
| Structure | hexagonal | |
| Tolerance of Length (mm) | 0.05 |
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