Electrical Properties | Metric | English | Comments |
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Dielectric Strength | >= 330 kV/mm | >= 8380 kV/in | |
Dow SiLK™ Y 120 Semiconductor Dielectric Resin SiLK™ Y 120 has an average pore size of < 2nm and a range of 1-3 nm, porous SiLK™ resins enables continuous Tantulum PVD barriers for 65 nm technology and beyond. Information provided by Dow |
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Dielectric Strength | >= 330 kV/mm | >= 8380 kV/in | |
Dow SiLK™ Y 250 Semiconductor Dielectric Resin SiLK™ Y 250 has an average pore size of < 2nm and a range of 1-3 nm, porous SiLK™ resins enables continuous Tantulum PVD barriers for 65 nm technology and beyond. Information provided by Dow |
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Dielectric Strength | >= 330 kV/mm | >= 8380 kV/in | |
Dow SiLK™ Y 80 Semiconductor Dielectric Resin SiLK™ Y 80 has an average pore size of < 2nm and a range of 1-3 nm, porous SiLK™ resins enables continuous Tantulum PVD barriers for 65 nm technology and beyond. Information provided by Dow |
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Dielectric Strength | 330 kV/mm | 8380 kV/in | JIS C-2319 |
DuPont Teijin Films Teonex® Q72 Polyester Film, 14 Gauge Teonex® Q72 is biaxially oriented, slightly hazy polyethylene naphthalate (PEN) film. This ultra thin film which was developed for capacitor applications. It is commercially available in nominal 14.. |