Material Notes:
Phosphoric Acid is highly selective in etching Si3N4 instead of SiO2. In combination with INTEROX® hydrogen peroxide and water, it is used to etch aluminum and InGaAs selective to InP. CAS-No.: 7664-38-2 / EC-No.: 231-633-2 / Index-No.: 015-011-00-6 Uses: Agriculture industry, Chemical industry, Cleaning agent, Electronic industry (Semiconductors), Etching agent, Fertilizer. Laboratory chemicals, Metal treatment, Paint, Textile industry, Food additives and acidity agent and PharmaceuticalsInformation provided by Solvay