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Destech Silicon Carbide, Solid or Foamed

Category Ceramic , Carbide , Other Engineering Material , Composite Core Material
Manufacturer Destech
Trade Name
Port Ningbo port,China
Trade Terms FOB, CFR, CIF
Payment Terms L/C, T/T, Western Union
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Material Notes:
Destech silicon carbide foam is produced by chemical vapor reaction (CVR), in which high temperature silicon bearing gases convert glassy, or vitreous, carbon foam to SiC. Destech SiC foam has no carbon core unlike SiC foams produced by chemical vapor deposition (CVD). SiC foam has increased density and electrical resistivity over its carbon counterpart, good oxidation resistance (up to 1650°C), good abrasion resistance, and excellent corrosion resistance (slight corrosion in molten bases, e.g. KOH). The properties shown are for solid, fine-grained, SiC. Ash content is less than 0.1%. Used for heating elements, electrodes, nozzles, and cylinders. Data provided by the manufacturer, Destech Corporation.
Physical Properties Metric English Comments
Bulk Density 1.76 - 1.81 g/cc
0.0636 - 0.0654 lb/in³
Precursor/core material (fine grained isotropic graphite)
3.12 g/cc
0.113 lb/in³
SiC
Density 3.20 g/cc
0.116 lb/in³
Apparent density (SiC outer layer)
Open Porosity <= 0.50 %

@Thickness 1.02 - 1.27 mm
<= 0.50 %

@Thickness 0.0402 - 0.0500 in
Specified for fine grained SiC surface layer
Mechanical Properties Metric English Comments
Tensile Strength, Ultimate >= 231 MPa
>= 33500 psi
Typical for SiC
Flexural Strength 400 MPa
58000 psi
Typical for SiC
Compressive Yield Strength >= 120 MPa
>= 17400 psi
Graphite substrate
Thermal Properties Metric English Comments
CTE, linear 3.50 - 4.00 µm/m-°C

@Temperature 20.0 °C
1.94 - 2.22 µin/in-°F

@Temperature 68.0 °F
Precursor/core material (fine grained isotropic graphite)
3.50 - 4.20 µm/m-°C

@Temperature 20.0 °C
1.94 - 2.33 µin/in-°F

@Temperature 68.0 °F
Maximum Service Temperature, Air 1650 °C
3000 °F
Maximum oxidation resistance temperature
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