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CeramTec CD 110 Silicon Carbide, SSiC

Category Ceramic , Carbide
Manufacturer CeramTec North America
Trade Name
Port Ningbo port,China
Trade Terms FOB, CFR, CIF
Payment Terms L/C, T/T, Western Union
Download PDF CeramTec CD 110 Silicon Carbide, SSiC.pdf
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Material Notes:
Silicon carbide is extremely hard and displays excellent corrosion and thermal shock resistance. It outstanding sliding properties and high thermal conductivity make useful in tribological applications. SSiC is resistant to all chemical media. Since no metallic silicon is present in the matrix, it can be used at temperatures up to 1600°C without impaired strength.
Physical Properties Metric English Comments
Density 3.10 g/cc
0.112 lb/in³
DIN EN 623-2
Water Absorption 0.00 %
0.00 %
Open Porosity; DIN EN 623-2
Permeability 0.00
0.00
%, Gas
Weibull Modulus 12
12
DINV ENV 843-5
Mechanical Properties Metric English Comments
Vickers Microhardness 2500
2500
HV1; DINV ENV 843-4
Tensile Modulus 415 GPa
60200 ksi
Young's; DINV ENV 843-2
Flexural Strength 440 MPa
63800 psi
DIN EN 843-1
Compressive Strength 2000 MPa
290000 psi
DIN 51067T1
Poissons Ratio 0.16
0.16
DINV ENV 843-2
Fracture Toughness 3.80 MPa-m½
3.46 ksi-in½
K<sub>IC</sub> (SEVNB); DIN CEN/TS 14425-1
Shear Modulus 179 GPa
26000 ksi
Calculated
Thermal Properties Metric English Comments
CTE, linear 3.50 µm/m-°C

@Temperature 20.0 - 400 °C
1.94 µin/in-°F

@Temperature 68.0 - 752 °F
DIN EN 821-1
4.30 µm/m-°C

@Temperature 20.0 - 1000 °C
2.39 µin/in-°F

@Temperature 68.0 - 1830 °F
DIN EN 821-1
Specific Heat Capacity 0.600 J/g-°C
0.143 BTU/lb-°F
DINV ENV 821-3
Thermal Conductivity 100 W/m-K
694 BTU-in/hr-ft²-°F
DIN EN 821-2
Maximum Service Temperature, Air 1400 °C
2550 °F
Maximum Service Temperature, Inert 1800 °C
3270 °F
Electrical Properties Metric English Comments
Volume Resistivity 10 ohm-cm

@Temperature 400 °C
10 ohm-cm

@Temperature 752 °F
IEC 672-1
5.00e+7 ohm-cm

@Temperature 20.0 °C
5.00e+7 ohm-cm

@Temperature 68.0 °F
IEC 672-1
Descriptive Properties Value Comments
Ra = Arithmetic Mean Roughness Value (µm) <0.1
Thermal Shock Resistance R1 (K) 240
calculated; R1 = [s? (1-µ)] / (a·E)
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